MT3S111 transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
* High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)
MT3S111
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25°C).
Features
* Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
* High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)
MT3S111
.
Image gallery
Download